Tunneling Spectroscopy of Magnetic Double Barrier Junctions

Author

Iovan, A. ; Lam, K. ; Andersson, S. ; Cherepov, S.S. ; Haviland, D.B. ; Korenivski, V.

Author_Institution

Nanostructure Phys., R. Inst. of Technol., Stockholm

Volume

43

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

2818

Lastpage

2820

Abstract

Scanning tunneling microscopy (STM) is used to study transport in magnetic double tunnel junctions (DTJs) formed using a fixed transparency barrier of a patterned tunnel junction (TJ), and a variable tunnel barrier between the top electrode of the patterned junction and the STM tip. A sufficiently thin top electrode has been predicted to result in a rectification of charge current through a DTJ when the two barriers have different transparency. Our measurements indeed show a high current rectification ratio for 3-nm-thick, continuous film top electrodes, which is observed for junctions with asymmetric tunnel barriers

Keywords

electrodes; iron alloys; magnesium compounds; magnetic multilayers; magnetic tunnelling; metal-insulator boundaries; nickel alloys; rectification; scanning tunnelling microscopy; silicon compounds; SiO-NiFe-MgO; asymmetric tunnel barrier; charge current rectification; fixed transparency barrier; magnetic double barrier junctions; scanning tunneling microscopy; thin top electrode; Electrodes; Electrons; Insulation; Magnetic field measurement; Magnetic tunneling; Metal-insulator structures; Proposals; Resonant tunneling devices; Semiconductor diodes; Spectroscopy; Current rectification; diode effect; magnetic tunnel junctions (MTJs); tunneling spectroscopy;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2007.893313

Filename

4202776