Title :
Highly reliable AlGaAs semiconductor lasers with both facets dry-etched
Author :
Tanaka, T. ; Ono, Y. ; Kajimura, T.
Author_Institution :
Central Res. Lab., Hitachi Co. Ltd., Tokyo, Japan
Abstract :
Both cavity facets of AlGaAs semiconductor lasers were fabricated using a reactive ion beam etching (RIBE) technique. The etched mirror´s reflectivity is estimated to be 0.24 and its scattering loss 0.15. Both facets dry-etched lasers at 70 degrees C heat-block temperature and 5 mW light output power showed no remarkable deterioration for over 3500 h.
Keywords :
III-V semiconductors; aluminium compounds; environmental testing; gallium arsenide; integrated optoelectronics; laser cavity resonators; life testing; reliability; semiconductor device testing; semiconductor junction lasers; sputter etching; 3500 h; 5 mW; 70 C; AlGaAs semiconductor lasers; IOE; OEIC; RIBE; cavity facets; facets dry-etched; high reliability lasers; light output power; reactive ion beam etching; reflectivity; scattering loss; semiconductors; temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890050
