• DocumentCode
    859799
  • Title

    Asymmetric planar doped barrier diodes for mixer and detector applications

  • Author

    Kearney, M.J. ; Kelly, Michael J. ; Davies, R.A. ; Kerr, T.M. ; Rees, P.K.

  • Author_Institution
    GEC Hirst Res. Centre, Wembley, UK
  • Volume
    25
  • Issue
    21
  • fYear
    1989
  • Firstpage
    1454
  • Lastpage
    1456
  • Abstract
    The authors verify physical arguments which suggest that carefully designed, asymmetric, planar doped barrier diodes are capable of performing at least as well as conventional Schottky diodes in low-frequency mixer and detector applications.
  • Keywords
    detector circuits; mixers (circuits); semiconductor device models; semiconductor diodes; semiconductor doping; solid-state microwave devices; 9.4 GHz; DC characteristics; SHF; asymmetric diodes; detector applications; low-frequency mixer; microwave devices; modelling; n +ip +in + structure; planar doped barrier diodes; zero bias detection;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890971
  • Filename
    46238