DocumentCode
859799
Title
Asymmetric planar doped barrier diodes for mixer and detector applications
Author
Kearney, M.J. ; Kelly, Michael J. ; Davies, R.A. ; Kerr, T.M. ; Rees, P.K.
Author_Institution
GEC Hirst Res. Centre, Wembley, UK
Volume
25
Issue
21
fYear
1989
Firstpage
1454
Lastpage
1456
Abstract
The authors verify physical arguments which suggest that carefully designed, asymmetric, planar doped barrier diodes are capable of performing at least as well as conventional Schottky diodes in low-frequency mixer and detector applications.
Keywords
detector circuits; mixers (circuits); semiconductor device models; semiconductor diodes; semiconductor doping; solid-state microwave devices; 9.4 GHz; DC characteristics; SHF; asymmetric diodes; detector applications; low-frequency mixer; microwave devices; modelling; n +ip +in + structure; planar doped barrier diodes; zero bias detection;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890971
Filename
46238
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