Title :
Asymmetric planar doped barrier diodes for mixer and detector applications
Author :
Kearney, M.J. ; Kelly, Michael J. ; Davies, R.A. ; Kerr, T.M. ; Rees, P.K.
Author_Institution :
GEC Hirst Res. Centre, Wembley, UK
Abstract :
The authors verify physical arguments which suggest that carefully designed, asymmetric, planar doped barrier diodes are capable of performing at least as well as conventional Schottky diodes in low-frequency mixer and detector applications.
Keywords :
detector circuits; mixers (circuits); semiconductor device models; semiconductor diodes; semiconductor doping; solid-state microwave devices; 9.4 GHz; DC characteristics; SHF; asymmetric diodes; detector applications; low-frequency mixer; microwave devices; modelling; n +ip +in + structure; planar doped barrier diodes; zero bias detection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890971
