Title :
High power and low optical feedback noise AlGaAs single quantum well lasers
Author :
Nido, M. ; Endo, Kazuhiro ; Ishikawa, Seiichiro ; Uchida, M. ; Komazaki, I. ; Hara, Kentaro ; Yuasa, Takeshi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Kanagawa, Japan
Abstract :
GaAs-AlGaAs single quantum well self-aligned lasers have been developed for optical disc recording. The lasers emitting at 834 nm have realised low optical feedback noise as well as high output power. The lasers have shown less than -130 dB/Hz relative intensity noise at 3 mW, and stable 50 mW operation (over 500 hours at 50 degrees C ambient).
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; laser transitions; semiconductor junction lasers; semiconductor quantum wells; 3 to 50 mW; 834 nm; GaAs-AlGaAs; III-V semiconductors; high output power; low optical feedback noise; optical disc recording; self-aligned lasers; semiconductor lasers; single quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890192
