DocumentCode :
860057
Title :
InSb n-channel enhancement mode MISFET grown by molecular beam epitaxy
Author :
Ashley, T. ; Dean, A.B. ; Elliott, C.T. ; McConville, C.F. ; Whitehouse, C.R.
Author_Institution :
R. Signals & Radar Establ., Malvern, UK
Volume :
25
Issue :
4
fYear :
1989
Firstpage :
289
Lastpage :
290
Abstract :
InSb n-channel enhancement mode MISFETs have been fabricated in homoepitaxial material grown by molecular beam epitaxy. Silicon doping during growth of the epitaxial layers was used to form the source and drain junctions. The output characteristics are of the classical type, with a maximum gm of 12 mS/mm, corresponding to a surface electron mobility of 3-4*104 cm2/Vs at liquid nitrogen temperature.
Keywords :
III-V semiconductors; indium antimonide; infrared detectors; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor growth; 12 mS; III-V semiconductors; IR detector; InSb:Si; MBE; MISFET; enhancement mode; fabrication; homoepitaxial material; molecular beam epitaxy; n-channel;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890201
Filename :
19718
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=860057
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