Title :
Capture high-frequency partial inductance more accurately by gauss quadrature integration with skin-effect model
Author :
Du, Yu ; Dai, Wayne
Author_Institution :
Synopsys Inc., Mountain View, CA, USA
fDate :
3/1/2006 12:00:00 AM
Abstract :
Simulating the current distribution is the key to extracting equivalent frequency-dependent partial inductance and resistance for a very large scale integration circuit by integral-equation-based numerical methods. However, it is very difficult to calculate the current distribution and the electromagnetic (EM) field induced by the current due to skin effect and proximity effect at high frequency. In this paper, we propose a skin-effect model and view the current distribution as two parts, i.e., the skin-effect part and the smooth part. We use the current density at certain Gaussian points to approximate the total current and the EM field induced by it. This approach can achieve the highest algebra accuracy for the smooth part of the current distribution function with the same number of current density points, and experiments show that our method is more efficient and accurate than traditional piecewise-constant or piecewise-linear methods to extract frequency-dependent partial inductance and resistance.
Keywords :
Gaussian processes; VLSI; current density; current distribution; electromagnetic fields; integral equations; network analysis; proximity effect (superconductivity); skin effect; Gauss quadrature integration; algebra accuracy; current density; current distribution; electromagnetic field; integral-equation; parasite parameter extraction; piecewise-constant methods; piecewise-linear methods; proximity effect; skin effect model; very large scale integration circuit; Circuit simulation; Current density; Current distribution; Electromagnetic fields; Frequency; Gaussian processes; Inductance; Proximity effect; Skin effect; Very large scale integration; Gauss quadrature; inductance; parasite parameter extraction; skin effect;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2005.864096