Title :
Acid colloidal silica slurry for Cu CMP
Author :
Kim, Nam-Hoon ; Chang, Eui-Goo
Author_Institution :
Sch. of Electr. & Electron. Eng., Chung-Ang Univ., Seoul, South Korea
Abstract :
Semi-abrasive free slurry for copper chemical mechanical planarisation (CMP) with below 0.5% acid colloidal silica provides good hydrogen peroxide stability, excellent colloidal silica dispersion ability and easiness of post-CMP cleaning. This approach may be useful for the application of singleand first-step copper CMP slurry with one package system.
Keywords :
chemical mechanical polishing; colloids; copper; electrokinetic effects; integrated circuit interconnections; integrated circuit metallisation; particle size; planarisation; slurries; Cu; acid colloidal silica slurry; chemical mechanical planarisation; colloidal silica dispersion ability; dual damascene; hydrogen peroxide stability; particle size; post-CMP cleaning; semi-abrasive free slurry; two-step polishing; zeta potential;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040047
