DocumentCode
860301
Title
Gain of TE-TM modes in quantum-well lasers
Author
Aversa, Claudio ; Iizuka, Keigo
Author_Institution
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Volume
28
Issue
9
fYear
1992
fDate
9/1/1992 12:00:00 AM
Firstpage
1864
Lastpage
1873
Abstract
Semiclassical laser theory is rigorously applied to semiconductor lasers in order to obtain both the complete TE and TM linear gain. The resulting expressions for the modal gain in heterostructure lasers differ in form from those conventionally accepted. In particular, the conventional modal gain written as the product of a confinement factor and a bulk gain is only an approximation of the true modal gain derived. The conventional expression relies on an explicit definition of the active region of the laser, which can be ambiguous when certain heterostructures, such as parabolic quantum wells, are to be treated. This ambiguity is eliminated by the gain expressions as a more natural active region defined by the product of electron and hole wave functions emerges. The relevant approximations which allow the newly derived gain equations to be written in forms similar to the conventional expressions for single quantum well, multiquantum well (MQW), and in wide active region lasers are explicitly shown
Keywords
laser modes; laser theory; semiconductor junction lasers; MQW; SQW; TE-TM modes; active region; confinement factor; electron wave functions; heterostructure lasers; hole wave functions; linear gain; modal gain; parabolic quantum wells; quantum-well lasers; semiclassical laser theory; semiconductor lasers; wide active region lasers; Charge carrier processes; Equations; Gain; Laser modes; Laser theory; Quantum well devices; Quantum well lasers; Semiconductor lasers; Tellurium; Wave functions;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.144478
Filename
144478
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