Title :
0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm
Author :
Hopkins, J.-M. ; Smith, S.A. ; Jeon, C.W. ; Sun, H.D. ; Burns, D. ; Calvez, S. ; Dawson, M.D. ; Jouhti, T. ; Pessa, M.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
Abstract :
What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 μm is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader.
Keywords :
III-V semiconductors; diamond; distributed Bragg reflectors; gallium arsenide; heat sinks; indium compounds; laser mirrors; optical windows; quantum well lasers; surface emitting lasers; 1.32 micron; CW output powers; DBR structure; GaInNAs; capillary-bonded arrangement; diamond windows; diode-pumped structure; high-power laser; multiple quantum well gain element; power transfer characteristic; single-crystal diamond heat spreader; vertical external cavity surface emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040049
