DocumentCode :
860357
Title :
Practical method for modelling the nonlinear behaviour of a travelling wave semiconductor optical amplifier
Author :
Ruiz-Moreno, S. ; Guitart, J.
Author_Institution :
Dept. of Signal Theory & Commun., Polytech. Univ. of Catalonia, Barcelona, Spain
Volume :
140
Issue :
1
fYear :
1993
fDate :
2/1/1993 12:00:00 AM
Firstpage :
39
Lastpage :
43
Abstract :
The authors present a simple model of a travelling wave semiconductor optical amplifier with an appreciable degree of saturation. The model uses a particular way of linearising the total carrier recombination R(N) to find useful expressions for the saturation parameter and/or the carrier lifetime. By combining these expressions and the gain measurements realised, it is possible to establish the dependence between the mentioned parameters and the input optical power
Keywords :
carrier lifetime; laser theory; optical saturation; semiconductor device models; semiconductor lasers; carrier lifetime; diode laser model; gain measurements; input optical power; nonlinear behaviour; optical saturation; saturation parameter; total carrier recombination; travelling wave semiconductor optical amplifier;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
Filename :
197393
Link To Document :
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