• DocumentCode
    860357
  • Title

    Practical method for modelling the nonlinear behaviour of a travelling wave semiconductor optical amplifier

  • Author

    Ruiz-Moreno, S. ; Guitart, J.

  • Author_Institution
    Dept. of Signal Theory & Commun., Polytech. Univ. of Catalonia, Barcelona, Spain
  • Volume
    140
  • Issue
    1
  • fYear
    1993
  • fDate
    2/1/1993 12:00:00 AM
  • Firstpage
    39
  • Lastpage
    43
  • Abstract
    The authors present a simple model of a travelling wave semiconductor optical amplifier with an appreciable degree of saturation. The model uses a particular way of linearising the total carrier recombination R(N) to find useful expressions for the saturation parameter and/or the carrier lifetime. By combining these expressions and the gain measurements realised, it is possible to establish the dependence between the mentioned parameters and the input optical power
  • Keywords
    carrier lifetime; laser theory; optical saturation; semiconductor device models; semiconductor lasers; carrier lifetime; diode laser model; gain measurements; input optical power; nonlinear behaviour; optical saturation; saturation parameter; total carrier recombination; travelling wave semiconductor optical amplifier;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • Filename
    197393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=860357