Simulation images from a low-pressure chlorine plasma reactor using DSMC

Author

Johannes, J. ; Bartel, T.J. ; Economou, D.J. ; Lymberopoulos, D.P. ; Wise, R.S.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

24

Issue

1

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

127

Lastpage

128

Abstract

Modeling of high-density chemically reacting plasmas at low pressures (<10 mtorr) is of interest to the microelectronics industry for improving tool and process designs. High-density plasma simulations were performed using a fluids code to predict electron behavior, coupled to a direct simulation Monte Carlo (DSMC) program for neutral and ion transport. Images presented are for a chlorine plasma simulation at 10 mtorr and include the temperature difference between neutral species, depicting the nonthermal equilibrium nature of the plasma, and angular and energy distributions of ions and neutrals to the wafer surface

Keywords

Monte Carlo methods; chemical reactions; chlorine; plasma devices; plasma diagnostics; plasma simulation; plasma transport processes; 10 mtorr; Cl₂; angular distributions; direct simulation Monte Carlo; electron behavior; energy distributions; fluids code; high-density chemically reacting plasmas; high-density plasma simulations; ion transport; low pressures; low-pressure Cl₂ plasma reactor; microelectronics industry; modeling; neutral transport; nonthermal equilibrium nature; process design; simulation images; tool design; wafer surface; Chemical industry; Chemical processes; Inductors; Microelectronics; Plasma applications; Plasma chemistry; Plasma simulation; Plasma temperature; Plasma transport processes; Process design;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/27.491745

Filename

491745