Title :
Fully differential 5 to 6 GHz low noise amplifier using SiGe HBT technology
Author :
Erben, U. ; Sönmez, E.
Author_Institution :
Atmel Germany GmbH, Heilbronn, Germany
Abstract :
The application of low-cost packages for 5 GHz devices mainly determines the performance. A report is presented on a fully differential SiGe HBT low noise amplifier, which helps to overcome the package limitation. The realised amplifier exhibits a power gain in excess of 15 dB and a minimum noise figure of less than 2.5 dB while drawing 36 mW from a single 3 V supply.
Keywords :
Ge-Si alloys; MMIC amplifiers; S-parameters; bipolar MMIC; bipolar analogue integrated circuits; differential amplifiers; 3 V; 36 mW; 5 GHz; HBT technology; MEXTRAM models; S-parameters; SiGe; fully differential amplifier; low noise amplifier; low-cost packages; power gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040018
