DocumentCode
860406
Title
Performance of amorphous diamond RF MEMS capacitive switch
Author
Webster, J.R. ; Dyck, C.W. ; Sullivan, J.P. ; Friedmann, T.A. ; Carton, A.J.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
40
Issue
1
fYear
2004
Firstpage
43
Lastpage
44
Abstract
Radio frequency microelectromechanical systems (RF MEMS) capacitive switches using amorphous diamond (a-D) as a novel dielectric with controlled leakage have been successfully developed. The devices show a unipolar switching response to a unipolar stimulus, indicating the absence of significant dielectric charging. These initial devices exhibit a down-state capacitance of 2.6 pF and a predicted static power dissipation of 10 nW. This technology is promising for the development of reliable, low-power RF MEMS switches.
Keywords
amorphous semiconductors; capacitance; diamond; electrostatic actuators; elemental semiconductors; low-power electronics; micromachining; microswitches; microwave switches; 2.6 pF; C; RF MEMS capacitive switch; S-parameter; amorphous diamond; charge injection; charge retention; controlled leakage; down-state capacitance; low-power switches; static power dissipation; surface micromachining; unipolar switching response;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20040034
Filename
1260666
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