Title :
Thin Film Microtransformer Integrated on Silicon for Signal Isolation
Author :
Wang, Ningning ; Donnell, Terence O. ; Roy, Saibal ; Kulkarni, Santosh ; McCloskey, Paul ; Mathuna, Cian O.
Author_Institution :
Tyndall Nat. Inst., Cork
fDate :
6/1/2007 12:00:00 AM
Abstract :
Microtransformers have been fabricated on silicon substrates with the aim of providing isolation for signal and power. Interleaved primary and secondary windings are sandwiched between two electroplated magnetic layers. The transformer has a turn ratio of 4:4. It has a primary inductance of 400 nH at low frequencies and dc resistance of 0.48 Omega. The voltage gain is -1 dB between 1-20 MHz with a 50-Omega load. When compared to previously reported microtransformer characteristics this is the highest reported voltage gain for a microtransformer
Keywords :
magnetic multilayers; micromechanical devices; power transformers; silicon; transformer windings; -1 dB; 0.48 ohm; 1 to 20 MHz; 50 ohm; electroplated magnetic layers; primary windings; secondary windings; signal isolation; silicon substrates; thin film microtransformer; Coils; Fabrication; Frequency; Magnetic anisotropy; Magnetic cores; Magnetic flux; Perpendicular magnetic anisotropy; Power transformers; Semiconductor thin films; Silicon; High frequency; integrated circuits; isolation technology; power transformers; signals;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2007.892593
