DocumentCode :
860533
Title :
Magnetoresistance Characterization of NiFe Films With a Planar Point Contact
Author :
Ohsawa, Yuichi
Author_Institution :
Corporate R&D Center, Toshiba Corp, Kawasaki
Volume :
43
Issue :
6
fYear :
2007
fDate :
6/1/2007 12:00:00 AM
Firstpage :
3007
Lastpage :
3009
Abstract :
Magnetoresistance (MR) characterization of NiFe films was performed with a point-contact (PC) whose size was varied from several hundreds to around ten nm2 by the ion milling process. Two kinds of MR origin, which were estimated to be domain wall MR (DWMR) and anisotropic MR (AMR), were observed by analytical decomposition of the R-H curves. The MRs showed contrastive dependence on the PC conductance due to difference of area in which they occurred. The DWMR in the PC increased as the PC size decreased and reached to a maximum of about 12.5%. The DWMR dependence on the NiFe-PC size coincided with that of fitting approximation based on some previous reports
Keywords :
Permalloy; enhanced magnetoresistance; ferromagnetic materials; magnetic domain walls; magnetic thin films; NiFe; NiFe films; Permalloy; domain wall; ion milling; magnetic confinement; magnetoresistance; planar point contact; Anisotropic magnetoresistance; Etching; Fabrication; Magnetic domain walls; Magnetic films; Milling; Optical films; Scanning electron microscopy; Testing; Transmission electron microscopy; Magnetic confinement; magnetic domains; magnetoresistance; permalloy films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2007.892179
Filename :
4202866
Link To Document :
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