DocumentCode
860591
Title
Direct simulation Monte Carlo (DSMC) of rarefied gas flow during etching of large diameter (300-mm) wafers
Author
Economou, Demetre J. ; Bartel, Timothy J.
Author_Institution
Dept. of Chem. Eng., Houston Univ., TX, USA
Volume
24
Issue
1
fYear
1996
fDate
2/1/1996 12:00:00 AM
Firstpage
131
Lastpage
132
Abstract
Strong density gradients of a gas species can be sustained even at very low pressures when the reaction probability of that species is high. Under these conditions, inlet gas arrangements are very important to reaction uniformity
Keywords
Monte Carlo methods; flow simulation; rarefied fluid dynamics; simulation; sputter etching; direct simulation Monte Carlo; etching; large diameter wafers; low pressure; rarefied gas flow; reaction probability; reaction uniformity; strong density gradients; Etching; Fluid flow; Inductors; Laboratories; Microelectronics; Monte Carlo methods; Plasma applications; Plasma devices; Sputtering; Throughput;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/27.491747
Filename
491747
Link To Document