Title :
Direct simulation Monte Carlo (DSMC) of rarefied gas flow during etching of large diameter (300-mm) wafers
Author :
Economou, Demetre J. ; Bartel, Timothy J.
Author_Institution :
Dept. of Chem. Eng., Houston Univ., TX, USA
fDate :
2/1/1996 12:00:00 AM
Abstract :
Strong density gradients of a gas species can be sustained even at very low pressures when the reaction probability of that species is high. Under these conditions, inlet gas arrangements are very important to reaction uniformity
Keywords :
Monte Carlo methods; flow simulation; rarefied fluid dynamics; simulation; sputter etching; direct simulation Monte Carlo; etching; large diameter wafers; low pressure; rarefied gas flow; reaction probability; reaction uniformity; strong density gradients; Etching; Fluid flow; Inductors; Laboratories; Microelectronics; Monte Carlo methods; Plasma applications; Plasma devices; Sputtering; Throughput;
Journal_Title :
Plasma Science, IEEE Transactions on
