DocumentCode

860603

Title

Alkali ion doping of silicon

Author

McCaldin, J.O.

Volume

52

Issue

3

fYear

1964

fDate

3/1/1964 12:00:00 AM

Firstpage

301

Lastpage

302

Keywords

Anodes; Capacitance; Current density; Doping; Ionization; Niobium; P-n junctions; Silicon; Space charge; Tunneling;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1964.2875

Filename

1444805