• DocumentCode
    860604
  • Title

    16×16 pixel silicon on sapphire CMOS digital pixel photosensor array

  • Author

    Culurciello, E. ; Andreou, A.G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
  • Volume
    40
  • Issue
    1
  • fYear
    2004
  • Firstpage
    66
  • Lastpage
    68
  • Abstract
    A report on a 16×16 pixel digital pixel photosensor array fabricated in silicon on sapphire CMOS technology is presented. The integrated current from integrated pin photodiodes is converted into a pulse density modulated address event stream at the pixel level. An arbitrated asynchronous interface is employed to output the digital data. The transparency of the sapphire substrate allows imaging from both the back and front side, opening possibilities for new and novel applications of CMOS photosensor arrays.
  • Keywords
    CMOS image sensors; integrated optoelectronics; p-i-n photodiodes; pulse frequency modulation; silicon-on-insulator; wavefront sensors; Al2O3; CMOS imagers; Si; arbitrated asynchronous interface; density modulated address event stream; digital pixel photosensor array; integrated current; integrated pin photodiodes; microscale adaptive wavefront correction; pulse frequency modulation; sapphire transparency; silicon on sapphire CMOS technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040055
  • Filename
    1260681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=860604