Title :
16×16 pixel silicon on sapphire CMOS digital pixel photosensor array
Author :
Culurciello, E. ; Andreou, A.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
A report on a 16×16 pixel digital pixel photosensor array fabricated in silicon on sapphire CMOS technology is presented. The integrated current from integrated pin photodiodes is converted into a pulse density modulated address event stream at the pixel level. An arbitrated asynchronous interface is employed to output the digital data. The transparency of the sapphire substrate allows imaging from both the back and front side, opening possibilities for new and novel applications of CMOS photosensor arrays.
Keywords :
CMOS image sensors; integrated optoelectronics; p-i-n photodiodes; pulse frequency modulation; silicon-on-insulator; wavefront sensors; Al2O3; CMOS imagers; Si; arbitrated asynchronous interface; density modulated address event stream; digital pixel photosensor array; integrated current; integrated pin photodiodes; microscale adaptive wavefront correction; pulse frequency modulation; sapphire transparency; silicon on sapphire CMOS technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040055
