DocumentCode :
860619
Title :
Micromachined coplanar waveguide on GaAs for optoelectronic IC applications
Author :
Onodera, K. ; Akeyoshi, T. ; Tokumitsu, M.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Volume :
40
Issue :
1
fYear :
2004
Firstpage :
68
Lastpage :
70
Abstract :
The fabrication and the millimetre-wave characteristics of a novel micromachined waveguide, called a grooved conductor-backed coplanar waveguide, are presented. The waveguide has good compatibility with optical waveguides. By adopting a microshielded structure, unwanted substrate modes and resonances can be suppressed at frequencies up to 110 GHz.
Keywords :
III-V semiconductors; S-parameters; coplanar waveguides; electromagnetic shielding; flip-chip devices; gallium arsenide; integrated optoelectronics; micromachining; waveguide discontinuities; 110 GHz; GaAs; S-parameters; double obtuse-angle bend; electromagnetic shielding ability; fabrication; flip-chip bonding; grooved conductor-backed waveguide; micromachined coplanar waveguide; microshielded structure; millimetre-wave characteristics; optoelectronic IC applications; ultra-broadband OEIC packaging; unwanted substrate modes suppression;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20040035
Filename :
1260682
Link To Document :
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