Title :
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate
Author :
Chini, A. ; Buttari, D. ; Coffie, R. ; Heikman, S. ; Keller, S. ; Mishra, U.K.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
Record power performance at 4 GHz has been obtained using field-plated AlGaN/GaN HEMTs on sapphire substrate. High power density (12 W/mm) as well as high efficiency (58%) have been measured. A comparison between devices with and without field plate on the same sample showed a significant reduction in knee-voltage walk-out for the field-plated device, thus enabling high power and efficiency operation.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; 4 GHz; AlGaN-GaN; electrically shorted gate; field-plated HEMT; high efficiency; high power density; knee-voltage walkout reduction; large signal characteristics; overlapping field-plate structure; passivated devices; peak power added efficiencies; pulsed I-V measurements; reduced dispersion phenomena; sapphire substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040017
