Title :
Electrical characteristics of Ir/Au and Pd/Ir/Au ohmic contacts on p-InGaAs
Author :
Jang, J.H. ; Kim, S. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
Ohmic contacts based on Ir/Au and Pd/Ir/Au metallisations have been formed on highly doped p-type InGaAs. Their electrical characteristics were measured and compared with those of conventional Ti/Pt/Au ohmic contacts. They were found to have ohmic contact resistance as low as Ti/Pt/Au metallisation but with superior thermal stabilities.
Keywords :
III-V semiconductors; ageing; contact resistance; gallium arsenide; gold; indium compounds; iridium; ohmic contacts; palladium; semiconductor device metallisation; thermal stability; InGaAs; Ir-Au; Pd-Ir-Au; aging characteristics; contact resistance; electrical characteristics; high temperature contacts; highly doped p-type; metallisations; ohmic contacts; thermal stabilities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040058
