• DocumentCode
    860699
  • Title

    Implantation-enhanced oxidation of tantalum for capacitor structures

  • Author

    Mohammed, M.A. ; Morgan, D.V. ; Nobes, M.

  • Author_Institution
    Sch. of Electr., Electron. & Syst. Eng., Univ. of Wales Coll. of Cardiff, UK
  • Volume
    25
  • Issue
    5
  • fYear
    1989
  • fDate
    3/2/1989 12:00:00 AM
  • Firstpage
    329
  • Lastpage
    330
  • Abstract
    The authors investigate the enhanced thermal oxidation of tantalum using oxygen-ion implantation. A comparison of the electrical and dielectric properties is made between the oxygen-implanted thermal oxides and of those fabricated without implantation. The ion-implanted tantalum-oxide films are shown to be superior to the unimplanted layers for the fabrication of oxide capacitors.
  • Keywords
    capacitors; dielectric properties of solids; dielectric thin films; electronic conduction in insulating thin films; integrated circuit technology; ion implantation; oxidation; tantalum; tantalum compounds; O ion implantation; Ta-Ta 2O 5; capacitor structures; dielectric properties; electrical properties; enhanced thermal oxidation; fabrication; integrated circuits; oxide capacitors; semiconductor IC; thermal oxides;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890229
  • Filename
    19747
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=860699