DocumentCode
860703
Title
Collectivization of Electronic Spin Distributions and Magneto-Electronic Properties of Atomic Clusters of Ga and In with As, V, and Mn
Author
Pozhar, Liudmila A. ; Mitchel, William C.
Author_Institution
Center for Mater. for Inf. Technol., Alabama Univ., Tuscaloosa, AL
Volume
43
Issue
6
fYear
2007
fDate
6/1/2007 12:00:00 AM
Firstpage
3037
Lastpage
3039
Abstract
Exponential increase in nano- and sub-nanoscale research has involved investigations of the microscopic nature and origin of magnetism, including a search for the smallest atomic clusters that possess collectivized electronic spin density distributions. In this work the Hartree-Fock (HF) and restricted open-shell HF (ROHF) methods have been used to synthesize virtually (i.e., fundamental theory-based, computationally) a set of small pyramidal clusters of Ga or In atoms with As, V, and Mn atoms. The majority of the clusters are not destabilized by inclusion of vanadium or manganese atoms. The cluster charge and spin density distributions are collectivized. The In-based clusters with V or Mn atoms possess relatively large spin density values that may be of interest for spintronic materials development
Keywords
HF calculations; III-V semiconductors; Schrodinger equation; arsenic compounds; atomic clusters; bonds (chemical); electron spin; gallium arsenide; gallium compounds; indium compounds; magnetic impurities; magnetoelectronics; molecular clusters; semimagnetic semiconductors; Ga10As2V2; Ga10As3V; Hartree-Fock calculations; In10As2V2; In10As3Mn; In10As3V; ROHF method; Schrodinger equation; atomic clusters; charge density distributions; cluster bonding; electronic spin density distribution collectivization; magnetic clusters; magnetoelectronic properties; pyramidal clusters; restricted open-shell HF method; semiconductor clusters; virtual synthesis method; Atomic beams; Atomic measurements; Hafnium; Magnetic devices; Magnetic materials; Magnetic properties; Magnetic semiconductors; Manganese; Quantum dot lasers; Quantum dots; Bonding; charge carrier density; magnetooptic effects; quantum dots;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2007.893693
Filename
4202880
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