DocumentCode
860729
Title
Double and triple charge pump for power IC: ideal dynamical models to an optimised design
Author
Di Cataldo, G. ; Palumbo, G.
Author_Institution
Dipartimento Elettrico, Elettronico e Sistemistico, Catania Univ., Italy
Volume
140
Issue
1
fYear
1993
fDate
2/1/1993 12:00:00 AM
Firstpage
33
Lastpage
38
Abstract
The authors propose an optimised design methodology for the double and triple optimised charge pump. The circuits discussed give an output voltage greater than the supply voltage and are commonly used in power IC or memory to allow the switching on of a MOS device. The theoretical models of charge pumps in the transient region are reported to obtain better knowledge of the circuits and the optimised design
Keywords
MOS integrated circuits; power integrated circuits; power supply circuits; transient response; MOS device switching; chip voltage supply; double charge pump; ideal dynamical models; optimised design methodology; power IC; transient region; triple charge pump;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
197472
Link To Document