Title :
SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
Author :
Wernersson, L.-E. ; Kabeer, S. ; Zela, V. ; Lind, E. ; Zhang, J. ; Seifert, W. ; Kosel, T. ; Seabaugh, A.
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, IN, USA
Abstract :
A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p+-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n+-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm2 and a current peak-to-valley ratio of 2.6 at room temperature.
Keywords :
Ge-Si alloys; chemical vapour deposition; diffusion; phosphorus; rapid thermal annealing; semiconductor doping; tunnel diodes; Esaki tunnel diodes; Si0.74Ge0.26:P; SiGe:P; cross-sectional transmission electron microscopy; current-voltage characteristics; degenerate doping levels; peak current density; phosphorous diffusion; proximity rapid thermal diffusion; pseudomorphic film; reactive ion etching; spike anneal; structural quality; ultrahigh vacuum chemical vapour deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040048
