Unified small-signal-noise model for active microwave devices

Author

Hu, Z.R. ; Yang, Z.M. ; Fusco, V.F. ; Stewart, J.A.C.

Author_Institution

Dept. of Electr. & Electron. Eng., Queen´´s Univ. of Belfast, UK

Volume

140

Issue

1

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

55

Lastpage

60

Abstract

A new method for modelling, concurrently, the small-signal and the noise performance of active microwave devices is proposed. Here the determination of the element values in a device equivalent circuit is no longer dependent only on the scattering parameters, but also on the device noise parameters. In other words, the device noise performance is treated as an intrinsic set of characteristics of a device like the S-parameters themselves and influences the determination of element values in the device equivalent circuit. On using the concurrent modelling procedure suggested in this paper, it has been found that, not only can the small-signal performance be simulated accurately, but also the prediction of noise performance is in much better agreement with measurements than those of recent published models

Keywords

S-parameters; Schottky gate field effect transistors; equivalent circuits; semiconductor device models; semiconductor device noise; semiconductor devices; solid-state microwave devices; S-parameters; active microwave devices; concurrent modelling procedure; device noise parameters; equivalent circuit; scattering parameters; small-signal-noise model; unified model;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

197475