Title :
Heavy doping for improved short-channel operation of GaAs MESFET
Author :
Mohammad, Siba ; Patil, M.B. ; Morkoc, H.
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
fDate :
3/2/1989 12:00:00 AM
Abstract :
A theoretical calculation is performed to investigate the I/V characteristics of GaAs MESFETs. The calculation is based on a simple model that takes into account the dependence of electron mobility on electric field and doping. It is shown that velocity overshoot may be treated by an effective velocity higher than the bulk value.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; carrier mobility; gallium arsenide; semiconductor device models; semiconductor doping; GaAs; I/V characteristics; III-V semiconductors; MESFET; electric field; electron mobility; heavy doping; model; short-channel operation; theoretical calculation; velocity overshoot;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890230
