DocumentCode
860803
Title
Heavy doping for improved short-channel operation of GaAs MESFET
Author
Mohammad, Siba ; Patil, M.B. ; Morkoc, H.
Author_Institution
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Volume
25
Issue
5
fYear
1989
fDate
3/2/1989 12:00:00 AM
Firstpage
331
Lastpage
332
Abstract
A theoretical calculation is performed to investigate the I/V characteristics of GaAs MESFETs. The calculation is based on a simple model that takes into account the dependence of electron mobility on electric field and doping. It is shown that velocity overshoot may be treated by an effective velocity higher than the bulk value.
Keywords
III-V semiconductors; Schottky gate field effect transistors; carrier mobility; gallium arsenide; semiconductor device models; semiconductor doping; GaAs; I/V characteristics; III-V semiconductors; MESFET; electric field; electron mobility; heavy doping; model; short-channel operation; theoretical calculation; velocity overshoot;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890230
Filename
19748
Link To Document