DocumentCode :
86082
Title :
High-Mobility Pentacene-Based Thin-Film Transistors With Synthesized Strontium Zirconate Nickelate Gate Insulators
Author :
Yu-Chi Chang ; Chia-Yu Wei ; Yen-Yu Chang ; Tsung-Yu Yang ; Yeong-Her Wang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
Volume :
60
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
4234
Lastpage :
4239
Abstract :
Strontium zirconate nickelate [(SZN); Sr0.69Ni0.47Zr0.085O3.75] was synthesized through a sol-gel method by adding nickel (II) acetylacetone instead of titanium isopropoxide, which can effectively make thin films smoother and further act as gate insulators applied in pentacene-based thin-film transistors. Sol-gel SZN thin films were investigated by X-ray photoelectron spectroscopy and atomic force microscopy to confirm the chemical composition and smooth surface roughness, and the latter property was found to be compatible for pentacene thin film growth. Thus, the electrical characteristics of pentacene-based transistors exhibited a high mobility of 10.04 cm2 V-1s-1 low threshold voltage of -1.51 V,, and low subthreshold swing slope of 350 mV/decade. To realize high mobility mechanisms, intermolecular coupling and reorganization energy of pentacene thin films were introduced. Another purpose of this introduction was to evaluate the higher hopping rate of carriers between the adjacent pentacene molecules on SZN derived from the March-Hush equation than other high-κ traditional sol-gel insulators.
Keywords :
X-ray photoelectron spectra; atomic force microscopy; nickel compounds; sol-gel processing; strontium compounds; surface roughness; thin film transistors; zirconium compounds; March-Hush equation; Sr0.69Ni0.47Zr0.085O3.75; X-ray photoelectron spectroscopy; atomic force microscopy; chemical composition; electrical characteristics; high mobility mechanisms; high-κ traditional sol-gel insulators; high-mobility pentacene-based thin-film transistors; hopping rate; intermolecular coupling; nickel (II) acetylacetone; pentacene molecules; pentacene thin film growth; reorganization energy; sol-gel SZN thin films; sol-gel method; subthreshold swing slope; surface roughness; synthesized strontium zirconate nickelate gate insulators; titanium isopropoxide; voltage -1.51 V; Couplings; Insulators; Logic gates; Organic thin film transistors; Pentacene; High mobility; March–Hush equation; hopping rate; organic thin-film transistors (OTFTs); strontium zirconate nickelate (SZN);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2287497
Filename :
6657817
Link To Document :
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