Title :
Effect of image force on ion current density in plasma discharges
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Sagamihara
fDate :
2/1/1996 12:00:00 AM
Abstract :
Ion current density at the bottom of narrow trenches has been calculated with a Monte Carlo method. It is found that in etching subquarter-micron trenches, the image force between the incident ions and the walls of the etched trench causes appreciable ion fluxes to the sidewalls and contributes to deviations from ideal etching anisotropy. The effect of the image force is particularly important in plasma etching discharges, which are characterized by low ion energies
Keywords :
Monte Carlo methods; discharges (electric); plasma density; sputter etching; Monte Carlo method; etched trench; etching anisotropy; etching subquarter-micron trenches; image force; ion current density; ion flux; low ion energies; narrow trenches; plasma discharges; plasma etching discharges; Anisotropic magnetoresistance; Current density; Dry etching; Plasma applications; Plasma density; Plasma sheaths; Plasma simulation; Radio frequency; Surface discharges; Ultra large scale integration;
Journal_Title :
Plasma Science, IEEE Transactions on
