Title :
GaInAs camel transistors grown by MOCVD
Author :
Marso, M. ; Zwinge, G. ; Beneking, H.
Author_Institution :
Inst. of Semicond. Electron., Aachen Tech. Univ., West Germany
Abstract :
Hot electron camel transistors have been fabricated for the first time in GaInAs. The camel structures were grown by MOCVD. The thickness of the base layer is 40 nm, the emitter barrier height is 0.55 eV, the collector barrier height is 0.25 eV, and the base transport factor is 0.6 at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; hot electron transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; 0.25 eV; 0.55 eV; GaInAs; HET; III-V semiconductors; MOCVD; camel transistors; collector barrier height; emitter barrier height; hot electron device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890976
