DocumentCode :
860881
Title :
11.4 Gbit/s multiplexer IC employing submicron Si bipolar technology for use in future broadband telecommunications systems
Author :
Bagheri, Mehdi ; Holden, W.S.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Volume :
25
Issue :
21
fYear :
1989
Firstpage :
1422
Lastpage :
1424
Abstract :
Presents an 11.4 Gbit/s, 2:1 multiplexer using a 0.6 mu m wide, nonpolysilicon emitter Si bipolar technology. The chip measures 0.9*0.8 mm2, dissipates 350 mW with a 5 V supply and operates at the fastest data rate reported for a multiplexer in any IC technology.
Keywords :
bipolar integrated circuits; integrated optoelectronics; multiplexing equipment; optical communication equipment; optical fibres; 0.6 micron; 11.4 Gbit/s; 350 mW; IC technology; Si; bipolar technology; broadband telecommunications systems; data rate; multiplexer IC;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890949
Filename :
46245
Link To Document :
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