N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

Author

Wong, Man Hoi ; Pei, Yi ; Chu, Rongming ; Rajan, Siddharth ; Swenson, Brian L. ; Brown, David F. ; Keller, Stacia ; DenBaars, Steven P. ; Speck, James S. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA

Volume

29

Issue

10

fYear

2008

Firstpage

1101

Lastpage

1104

Abstract

We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on the N-face, in which the 2-D electron gas (2DEG) is induced at the top GaN/AlN interface. The use of AlN eliminates alloy disorder scattering to the 2DEG and provides strong back-barrier confinement of the 2DEG under high electric fields for device scaling. Devices with 0.7-mum gate length showed a current-gain cutoff frequency (fT) of 17 GHz and a power-gain cutoff frequency (f _max) of 37 GHz. A continuous-wave output power density of 7.1 W/mm was measured at 4 GHz, with 58% power-added efficiency and a large-signal gain of 15.3 dB at a drain bias of 35 V.

Keywords

MIS devices; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; two-dimensional electron gas; 2-D electron gas; N-face metal-insulator-semiconductor HEMT; SiN-AlGaN-GaN-AlN-GaN; back-barrier confinement; continuous-wave output power density; device scaling; frequency 17 GHz; frequency 37 GHz; frequency 4 GHz; high-electron-mobility transistors; size 0.7 mum; voltage 35 V; AlN; GaN; N-face; back-barrier; high-electron-mobility transistor (HEMT); metal–insulator–semiconductor (MIS); metal–insulator–semiconductor (MIS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2003543

Filename

4624539