Title :
High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base
Author :
Ahmari ; Fresina ; Hartmann ; Barlage ; Mares ; Feng ; Stillman
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In/sub x/Ga/sub 1-x/As base has been demonstrated with f/sub T/=83 GHz and f/sub max/=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT´s. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high f/sub max/ results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT´s in high-speed microwave applications.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; 197 GHz; 83 GHz; EHF; InGaAs-InGaP-GaAs; SHF; compositionally graded base; cutoff frequency; electron transport; heavily doped base; heterojunction bipolar transistor; high-speed HBT; high-speed microwave applications; self-aligned HBT; self-aligned base contacts; self-aligned collector etch; strained In/sub x/Ga/sub 1-x/As base; Cutoff frequency; Electrons; Etching; Gallium arsenide; Heterojunction bipolar transistors; Indium; Manufacturing; Microwave devices; Performance gain; Photonic band gap;
Journal_Title :
Electron Device Letters, IEEE
