Title :
5 mm high-power-density dual-delta-doped power HEMT´s for 3 V L-band applications
Author :
Yeong-Lin Lai ; Chang, E.Y. ; Chun-Yen Chang ; Chen, T.K. ; Liu, T.H. ; Wang, S.P. ; Chen, T.H. ; Lee, C.T.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
5/1/1996 12:00:00 AM
Abstract :
A high-power-density dual-/spl delta/-doped AlGaAs-InGaAs-GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. The 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at V/sub gs/=0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-/spl delta/-doped AlGaAs-InGaAs-GaAs HEMT reported to date for low voltage (3 V) wireless applications."
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; current density; doping profiles; gallium arsenide; indium compounds; land mobile radio; power HEMT; power field effect transistors; 1 W; 1 micron; 18.2 dB; 270 mS/mm; 3 V; 5 mm; 64 percent; 900 MHz; AlGaAs-InGaAs-GaAs; L-band applications; LV wireless applications; UHF device; class AB operation; dual-/spl delta/-doped; dual-delta-doped HEMT; high electron mobility transistor; high-power-density operation; personal communication applications; power HEMT; Current density; Gallium arsenide; HEMTs; Indium gallium arsenide; L-band; Low voltage; MODFETs; Power generation; Transconductance; Wireless communication;
Journal_Title :
Electron Device Letters, IEEE
