DocumentCode :
861078
Title :
Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors
Author :
Chen, Kevin J. ; Yamamoto, Masafumi
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Volume :
17
Issue :
5
fYear :
1996
fDate :
5/1/1996 12:00:00 AM
Firstpage :
235
Lastpage :
238
Abstract :
Frequency multipliers (doubler and tripler) are demonstrated at room temperature, using a simple circuit that combines a load resistor with an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates an InGaAs/AlAs/InAs pseudomorphic resonant tunneling diode into the source of a nonalloyed ohmic contact InAlAs/InGaAs high electron mobility transistor. A nearly flat valley current is obtained in the RTHEMT´s current-voltage characteristics, which results in pronounced negative transconductance throughout a wide range of drain-to-source bias voltages. As a result, frequency multipliers using RTHEMT´s feature large output voltage swing and reduced power consumption.
Keywords :
HEMT circuits; III-V semiconductors; S-parameters; frequency multipliers; indium compounds; microwave field effect transistors; microwave frequency convertors; negative resistance devices; resonant tunnelling transistors; 0.5 to 25.5 GHz; InAlAs-InGaAs; InGaAs-AlAs-InAs; InP; S-parameter measurements; current-voltage characteristics; frequency doubler; frequency multipliers; frequency tripler; microwave region; negative transconductance; nonalloyed ohmic contact HEMT; pseudomorphic resonant tunneling diode; resonant-tunneling high electron mobility transistors; Diodes; Frequency; HEMTs; Indium gallium arsenide; MODFETs; RLC circuits; Resistors; Resonant tunneling devices; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.491840
Filename :
491840
Link To Document :
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