Title :
An integrated thermo-capacitive type MOS flow sensor
Author :
Lin, Kwang M. ; Kwok, CheeYee ; Huang, Ruey S.
Author_Institution :
Sch. of Electr. Eng., New South Wales Univ., Sydney, NSW, Australia
fDate :
5/1/1996 12:00:00 AM
Abstract :
A prototype of a new thermo-capacitive integrated flow sensor consisting of a floating-gate MOS transistor has been developed. Tantalum pentoxide is the dielectric material between the top (control) gate and the floating-gate. The temperature dependence of the dielectric constant is about 375 ppm//spl deg/C. The process flow is compatible with standard MOS process and augmented to include a capacitor module and bulk micromachining. The output voltage change at the flow velocity of 20 m/s is about 26 mV at 57 mW of heater power. The sensitivity in the 0-4 m/s flow velocity region is 4.25 mV(m/s)/sup -1/.
Keywords :
MOSFET; capacitance measurement; flow measurement; microsensors; 0 to 4 m/s; 20 m/s; 57 mW; Ta/sub 2/O/sub 5/; bulk micromachining; capacitor module; dielectric constant; floating-gate MOS transistor; process flow; thermo-capacitive integrated flow sensor; Capacitance; Fluid flow; Heating; MOS capacitors; MOSFETs; Prototypes; Temperature dependence; Temperature sensors; Thermal sensors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
