Title :
Single-structure heater and temperature sensor using a p-type polycrystalline diamond resistor
Author :
Yang, G.S. ; Aslam, D.M.
Author_Institution :
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
Heat generation and temperature sensing are reported in a single p-type diamond resistor fabricated on an oxidized Si substrate using diamond film technology compatible with integrated circuit (IC) processing. Power densities in excess of 600 W/in./sup 2/ are observed for the heaters. The temperature response of the sensor is characterized in the temperature range of 300-725 K. Such a diamond heater/sensor device is reported for the first time.
Keywords :
diamond; elemental semiconductors; temperature sensors; thermal conductivity; thermistors; 300 to 725 K; C-Si; IC processing; Si; p-type polycrystalline diamond resistor; power densities; single-structure heater; temperature response; temperature sensor; thermal conductivity; Chemical elements; Chemical vapor deposition; Heating; Resistors; Semiconductor films; Substrates; Temperature distribution; Temperature sensors; Thermal conductivity; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
