Title :
Low-Loss 4–6-GHz Tunable Filter With 3-Bit High-
Orthogonal Bias RF-MEMS Capacitance Network
Author :
Park, Sang-June ; El-Tanani, Mohammed A. ; Reines, I. ; Rebeiz, Gabriel M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
Abstract :
This paper presents a low-loss 4-6-GHz 3-bit tunable filter on a quartz substrate using a high-Q 3-bit orthogonal bias RF microelectromechanical systems capacitance network. Detailed design equations for the capacitively loaded coupled lambda/2 resonators and with capacitive external coupling and source-load impedance loading are discussed. Measurements show an unloaded Q of 85-170, an insertion loss of 1.5-2.8 dB, and a 1-dB bandwidth of 4.35plusmn0.35% at 4-6 GHz. The measured third-order intermodulation intercept point and 1-dB power compression point at 5.91 GHz are > 40 and 27.5 dBm, respectively. The unloaded Q can be improved to 125-210 with the use of a thicker bottom electrode. To our knowledge, this is the highest Q tunable planar filter to date at this frequency range.
Keywords :
Q-factor; intermodulation; micromechanical devices; microwave filters; resonator filters; capacitive external coupling; capacitively loaded coupled resonators; frequency 4 GHz to 6 GHz; high-Q orthogonal bias RF-MEMS capacitance network; impedance loading; insertion loss; loss 1.5 dB to 2.8 dB; microelectromechanical systems; power compression point; quartz substrate; thicker bottom electrode; third-order intermodulation intercept point; tunable filter; Capacitance network; RF microelectromechanical systems (RF-MEMS); capacitive loading; coupled open-loop resonators; source–load impedance loading; tunable filter;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2008.2003521