Low-threshold GaInAsP bridge-contacted planar buried-ridge structure lasers

A new type of GaInAsP/InP buried-heterostructure laser, the bridge-contacted planar buried-ridge structure (BC-PBRS) laser, is reported. Current confinement is obtained by reducing the effective area of the forward-biased pn homojunctions at both sides of the active region. Owing to the self-aligning process technique, the lateral InP confining layer widths are highly controllable and reproducible. Threshold currents of 10 mA and maximum operation temperatures exceeding 100 degrees C are achieved in the 1.3 mu m wavelength region.