Title :
Correlation of tunnelling currents and tunable luminescence in selectively diffused nipi LEDs
Author :
Ackley, D.E. ; Mantz, J. ; Lee, H. ; Nouri, N. ; Cheponis, R. ; Shieh, C.-L.
Author_Institution :
Siemens Res. & Technol. Labs., Princeton, NJ, USA
fDate :
4/27/1989 12:00:00 AM
Abstract :
Measurements of the current/voltage characteristics and electroluminescence spectra of nipi LEDs with selectively diffused contacts have been performed over the temperature range 3-300 K. Good correlation has been observed between the forward characteristics of the diodes and the tuning of the electroluminescence. Analysis of the I/V characteristics indicates that the recombination occurs by electron tunnelling through the parabolic potential barriers.
Keywords :
electroluminescence; light emitting diodes; semiconductor superlattices; tunnelling; 3 to 300 K; current/voltage characteristics; doping superlattices; electroluminescence spectra; electron tunnelling; forward characteristics; parabolic potential barriers; selectively diffused n-i-p-i LED; tunable luminescence; tunnelling currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890382
