Title :
Accurate analytical approximations for error function and its integral (semiconductor junctions)
Author_Institution :
Dept. of Electr. Eng., Portland State Univ., OR, USA
fDate :
4/27/1989 12:00:00 AM
Abstract :
Analytical expressions for the error function and the integral of the error function, which can be used in the calculation of electric field and potential distribution in semiconductor junctions with a Gaussian doping profile, are presented. For both functions, the complete x-interval, ranging from 0 to infinity, is handled with a single expression. The absolute accuracy of the analytical expressions for all x-values is better than +or-1.6*10-9 for the error function and better than +or-3.7*10-8 for the integral of the error function.
Keywords :
doping profiles; electric fields; electric potential; error analysis; semiconductor junctions; Gaussian doping profile; complete x-interval; electric field; error function; integral; potential distribution; semiconductor junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890383