Title :
Bulk silicon technology for complementary MESFETs
Author :
Magnusson, U. ; Tiren, J. ; Soderbarg, A. ; Rosling, M. ; Grelsson, O. ; Bleichner, H. ; Nylander, J.O. ; Berg, Skyler
Author_Institution :
Dept. of Electron., Inst. of Technol., Uppsala Univ., Sweden
fDate :
4/27/1989 12:00:00 AM
Abstract :
A technology for fabrication of complementary silicon MESFETs on bulk silicon substrates has been developed. The technology is similar to CMOS technology, and utilises n-silicon substrates. P-wells are used for the n-channel devices. Device isolation was achieved by trench etching. The silicides of Er and Pt were used as gate Schottky contacts. P- and n-channel characteristics are presented together with subthreshold behaviour and preliminary results regarding radiation hardness. Also, results from two-dimensional simulations of the devices are presented.
Keywords :
Schottky gate field effect transistors; integrated circuit technology; radiation hardening (electronics); semiconductor technology; silicon; ErSi 2-Si; PtSi-Si; bulk Si technology; complementary MESFETs; device isolation; gate Schottky contacts; n-channel devices; p-wells; radiation hardness; subthreshold behaviour; trench etching; two-dimensional simulations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890385
