Title :
Temperature, bandgap-wavelength, and doping dependence off peak-gain coefficient parabolic model parameters for InGaAsP/InP semiconductor laser diodes
Author :
Ghafoori-Shiraz, H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Birmingham Univ., UK
fDate :
4/1/1988 12:00:00 AM
Abstract :
Varying temperature and doping types were used in both 1.3-μm- and 1.55-μm-band-wavelength laser diodes to determine the dependence of the parameters in a parabolic model on each of these factors. The parameters were calculated by using the least-mean-square method to fit the results of the exact solution. Results are presented in graphical and tabular form
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.3 micron; 1.55 micron; InGaAsP-InP; bandgap-wavelength; doping dependence; doping types; laser diodes; least-mean-square method; peak-gain coefficient parabolic model parameters; semiconductor laser diodes; temperature; Charge carrier density; Diode lasers; Gain measurement; Indium phosphide; Laser theory; Peak to average power ratio; Semiconductor device doping; Semiconductor lasers; Semiconductor process modeling; Temperature dependence;
Journal_Title :
Lightwave Technology, Journal of
