Dynamic Simulation of Toggle Mode MRAM Operating Field Margin

Dynamic switching behavior of antiferromagnetically coupled single-domain bilayers at 0 and 300 K has been investigated using Landau-Lifshitz (LL) equation. The operating field windows for toggle-magnetic random access memory (MRAM) have been found narrower than the ones previously obtained by analytic calculations, even at 0 K, with the general trend that the longer the duration and rise/fall times are, the wider the window is. The simulation at 300 K showed that the thermal effect is substantial in degradation of the operating field window, especially due to the increase of the error rate in the higher operating field region, although the enhancement of the damping factor in nanomagnetic devices helps reduce the window reduction considerably