Title :
Novel strained quantum well laser grown by MOVPE
Author :
Westbrook, Lamar ; Hatch, C.B. ; Wilkie, J.H.
fDate :
4/27/1989 12:00:00 AM
Abstract :
Strained-layer broad-area lasers have been grown by MOVPE. The structures contain 3.5 nm-wide Ga0.3In0.7As quantum wells. They emit close to 1.5 mu m and have been made to lase under current injection. These structures were compared with similar lasers containing unstrained 7.0 nm-wide Ga0.47In0.53As quantum wells also emitting at 1.5 mu m. No improvement has been found in Jth (933 A cm-2) or T0 (47 K) in the case of the strained structure, despite the expected band structure modification.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 4.7 K; Ga 0.3In 0.7As quantum wells; MOVPE; band structure modification; broad-area lasers; current injection; strained quantum well laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890394
