Title :
MOCVD-grown AlInAs/GaInAs MODFET with drain currents higher than 1.3 mA/mm
Author :
Hong, Woo-Pyo ; Chang, Gee-Kung ; Bhat, Ritesh ; Chan, W. ; Van der Gaag, B. ; Lin, Peng ; Abeles, J.H.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
4/27/1989 12:00:00 AM
Abstract :
Very high-density and high-mobility AlInAs/GaInAs modulation-doped heterostructures have been successfully grown by low-pressure MOCVD. FETs, having gate-lengths of 0.25 mu m, fabricated from these heterostructures show transconductances as high as 700 mS/mm, and drain saturation currents in excess of 1.3 mA/mm at Vgs=0 V. This current density is among the highest yet reported for FETs grown by any technique. The extracted current-gain cutoff frequency is 78 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 0.25 micron; 700 mS; 78 GHz; AlInAs-GaInAs; MODFET; current density; current-gain cutoff frequency; drain currents; gate-lengths; low-pressure MOCVD; modulation-doped heterostructures; transconductances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890395
