Title :
Photoluminescence in InP hydrogenated by plasma exposure
Author :
Sugino, T. ; Boonyasirikool, A. ; Shirafuji, J. ; Hashimoto, H.
Author_Institution :
Dept. of Electr. Eng., Fac. of Eng., Osaka Univ., Japan
fDate :
4/27/1989 12:00:00 AM
Abstract :
Hydrogenation of an InP surface has been achieved by hydrogen plasma. Exposure in the limited temperature range 95-100 degrees C gives rise to a remarkable enhancement of the photoluminescence (PL) intensity by a factor of 5.4 compared with that of unexposed InP. On the other hand, a reduction in the PL intensity occurs at temperatures a little higher than 100 degrees C which leads to surface damage owing to preferential dissociation of phosphorus from the surface of InP. It is confirmed by secondary ion mass spectroscopy (SIMS) that hydrogen with concentration of 1*1018 cm-3 diffuses into the bulk InP down to a depth of 300 nm.
Keywords :
III-V semiconductors; hydrogen; indium compounds; luminescence of inorganic solids; photoluminescence; secondary ion mass spectra; semiconductor doping; surface structure; 95 to 100 degC; H 2 plasma; III-V semiconductors; InP:H; SIMS; hydrogenation; photoluminescence; plasma exposure; secondary ion mass spectroscopy; surface damage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890401
