Title :
GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm
Author :
Wistey, M.A. ; Bank, S.R. ; Bae, H.P. ; Yuen, H.B. ; Pickett, E.R. ; Goddard, L.L. ; Harris, J.S.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
fDate :
3/2/2006 12:00:00 AM
Abstract :
Electrically pumped, C-band vertical cavity surface emitting lasers (VCSELs) grown on GaAs are reported for the first time. The VCSELs employed three GaInNAsSb quantum wells separated by GaNAs barriers. Pulsed lasing was observed at 1534 nm, in the ITU C-band, when cooled. These lasers exhibit the longest wavelength reported to date for electrically pumped VCSELs grown on GaAs substrates.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; optical pumping; quantum well lasers; semiconductor growth; semiconductor quantum wells; surface emitting lasers; 1534 nm; C-band lasers; GaInNAsSb quantum wells; GaInNAsSb-GaAs; GaNAs barriers; VCSEL; pulsed lasing; vertical cavity surface emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20064455
