Title :
Light Output Enhancement of InGaN Light-Emitting Diodes Grown on Masklessly Etched Sapphire Substrates
Author :
Lin, Hung-Cheng ; Lin, Ruo-Syuan ; Chyi, Jen-Inn ; Lee, Chia-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
Abstract :
A maskless wet-etching method is used to prepare patterned sapphire substrates for enhancing the output power of InGaN light-emitting diodes (LEDs). Blue LEDs grown on the patterned sapphire substrates exhibit an output power of 24.9 mW, which is 19.4% higher than that of the devices grown on flat substrates. The uniformity of the optical and electrical properties of LEDs across a 2-in wafer is slightly improved as well.
Keywords :
III-V semiconductors; etching; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; Al2O3; InGaN; blue LED; light output enhancement; light-emitting diodes; maskless wet-etching method; output power; patterned sapphire substrates; Atomic force microscopy; Light emitting diodes; Optical surface waves; Power generation; Rough surfaces; Scanning electron microscopy; Substrates; Surface morphology; Surface roughness; Wet etching; GaN; InGaN; light-emitting diodes (LEDs); patterned sapphire;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.2002736
