Title :
100 W C-band single-chip GaN FET power amplifier
Author :
Okamoto, Y. ; Wakejima, A. ; Ando, Y. ; Nakayama, T. ; Matsunaga, K. ; Miyamoto, H.
Author_Institution :
R&D Assoc. for Future Electron Devices, NEC Corp., Otsu Shiga, Japan
fDate :
3/2/2006 12:00:00 AM
Abstract :
A single-chip GaN-FET amplifier exhibits record output powers of C-band solid-state amplifiers under continuous-wave (CW) and pulsed operation conditions. At 5.0 GHz, the developed GaN-FET amplifier with 24 mm gate periphery delivered a CW 100 W output power with 12.9 dB linear gain and 31% power-added efficiency and a pulsed 155 W output power with 13.0 dB linear gain.
Keywords :
HEMT circuits; III-V semiconductors; gallium compounds; microwave power amplifiers; power HEMT; wide band gap semiconductors; 100 W; 12.9 dB; 13 dB; 155 W; 5 GHz; AlGaN-GaN; C-band power amplifier; FET power amplifier; continuous-wave condition; heterojunction FET; linear gain; power-added efficiency; pulsed operation condition; pulsed output power; solid-state amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20064067
